SST39VF1601C Series

16Mb 2.7-3.6V Parallel Flash

Catalog

16Mb 2.7-3.6V Parallel Flash

Part	Package / Case	Technology	Supplier Device Package	Memory Format	Memory Organization	Operating Temperature [Max]	Operating Temperature [Min]	Write Cycle Time - Word, Page	Access Time	Memory Size	Memory Interface	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Type	Mounting Type	Package / Case [y]	Package / Case [y]
Microchip Technology SST39VF1601C-70-4I-B3KE-T	48-TFBGA	FLASH	48-TFBGA (6x8)	FLASH	1 M	85 °C	-40 °C	10 µs	70 ns	16 Mb	Parallel	2.7 V	3.6 V	Non-Volatile	Surface Mount
Microchip Technology SST39VF1601C-70-4I-MAQE	48-WFBGA	FLASH	48-WFBGA (6x4)	FLASH	1 M	85 °C	-40 °C	10 µs	70 ns	16 Mb	Parallel	2.7 V	3.6 V	Non-Volatile	Surface Mount
Microchip Technology SST39VF1601C-70-4C-B3KE-T	48-TFBGA	FLASH	48-TFBGA (6x8)	FLASH	1 M	70 °C	0 °C	10 µs	70 ns	16 Mb	Parallel	2.7 V	3.6 V	Non-Volatile	Surface Mount
Microchip Technology SST39VF1601C-70-4C-B3KE	48-TFBGA	FLASH	48-TFBGA (6x8)	FLASH	1 M	70 °C	0 °C	10 µs	70 ns	16 Mb	Parallel	2.7 V	3.6 V	Non-Volatile	Surface Mount
Microchip Technology SST39VF1601C-70-4I-EKE-T	48-TFSOP	FLASH	48-TSOP	FLASH	1 M	85 °C	-40 °C	10 µs	70 ns	16 Mb	Parallel	2.7 V	3.6 V	Non-Volatile	Surface Mount	18.4 mm	0.724 in
Microchip Technology SST39VF1601C-70-4I-EKE	48-TFSOP	FLASH	48-TSOP	FLASH	1 M	85 °C	-40 °C	10 µs	70 ns	16 Mb	Parallel	2.7 V	3.6 V	Non-Volatile	Surface Mount	18.4 mm	0.724 in
Microchip Technology SST39VF1601C-70-4I-B3KE	48-TFBGA	FLASH	48-TFBGA (6x8)	FLASH	1 M	85 °C	-40 °C	10 µs	70 ns	16 Mb	Parallel	2.7 V	3.6 V	Non-Volatile	Surface Mount
Microchip Technology SST39VF1601C-70-4C-EKE	48-TFSOP	FLASH	48-TSOP	FLASH	1 M	70 °C	0 °C	10 µs	70 ns	16 Mb	Parallel	2.7 V	3.6 V	Non-Volatile	Surface Mount	18.4 mm	0.724 in

Catalog

16Mb 2.7-3.6V Parallel Flash

Key Features

• + Organized as 1M x16: SST39VF1601C/1602C

• + Low Power Consumption (typical values at 5 MHz)

• – Active Current: 9 mA (typical)

• – Standby Current: 3 µA (typical)

• – Auto Low Power Mode: 3 µA (typical)

• + Hardware Block-Protection/WP# Input Pin

• – Top Block-Protection (top 8 KWord)

• – Bottom Block-Protection (bottom 8 KWord)

• + Sector-Erase Capability

• – Uniform 2 KWord sectors

• + Block-Erase Capability

• – Flexible block architecture; one 8-, two 4-, one

• 16-, and thirty one 32-KWord blocks

• + Chip-Erase Capability

• + Erase-Suspend/Erase-Resume Capabilities

• + Hardware Reset Pin (RST#)

• + Security-ID Feature

• – SST: 128 bits; User: 128 words

• + Fast Erase and Word-Program:

• – Sector-Erase Time: 18 ms (typical)

• – Block-Erase Time: 18 ms (typical)

• – Chip-Erase Time: 40 ms (typical)

• – Word-Program Time: 7 µs (typical)

• + Packages Available

• – 48-lead TSOP (12mm x 20mm)

• – 48-ball TFBGA (6mm x 8mm)

• – 48-ball WFBGA (4mm x 6mm)

• + All devices are RoHS compliant

Description

The SST39VF1601C device is 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF1601C writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories.