IC NVSRAM 4MBIT PARALLEL 32EDIP
Part | Memory Type | Memory Size | Memory Format | Voltage - Supply [Min] | Voltage - Supply [Max] | Package / Case | Package / Case | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Memory Interface | Technology | Access Time | Memory Organization | Mounting Type | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Integrated DS1250AB-70IND | Non-Volatile | 512 kb | NVSRAM | 4.75 V | 5.25 V | 0.6 in | 15.24 mm | 32-DIP Module | 85 °C | -40 °C | 32-EDIP | Parallel | NVSRAM (Non-Volatile SRAM) | 70 ns | 512 K | Through Hole | ||
Analog Devices Inc./Maxim Integrated DS1250ABP-100+ | Non-Volatile | 512 kb | NVSRAM | 4.75 V | 5.25 V | 34-PowerCap™ Module | 70 °C | 0 °C | 34-PowerCap Module | Parallel | NVSRAM (Non-Volatile SRAM) | 100 ns | 512 K | Surface Mount | 100 ns | 100 ns | ||
Analog Devices Inc./Maxim Integrated DS1250AB-100IND | Non-Volatile | 512 kb | NVSRAM | 4.75 V | 5.25 V | 0.6 in | 15.24 mm | 32-DIP Module | 85 °C | -40 °C | 32-EDIP | Parallel | NVSRAM (Non-Volatile SRAM) | 100 ns | 512 K | Through Hole | 100 ns | 100 ns |
Analog Devices Inc./Maxim Integrated DS1250ABP-70IND+ | Non-Volatile | 512 kb | NVSRAM | 4.75 V | 5.25 V | 34-PowerCap™ Module | 85 °C | -40 °C | 34-PowerCap Module | Parallel | NVSRAM (Non-Volatile SRAM) | 70 ns | 512 K | Surface Mount | ||||
Analog Devices Inc./Maxim Integrated DS1250AB-70+ | Non-Volatile | 512 kb | NVSRAM | 4.75 V | 5.25 V | 0.6 in | 15.24 mm | 32-DIP Module | 70 °C | 0 °C | 32-EDIP | Parallel | NVSRAM (Non-Volatile SRAM) | 70 ns | 512 K | Through Hole | ||
Analog Devices Inc./Maxim Integrated DS1250AB-70IND+ | Non-Volatile | 512 kb | NVSRAM | 4.75 V | 5.25 V | 0.6 in | 15.24 mm | 32-DIP Module | 85 °C | -40 °C | 32-EDIP | Parallel | NVSRAM (Non-Volatile SRAM) | 70 ns | 512 K | Through Hole | ||
Analog Devices Inc./Maxim Integrated DS1250AB-100IND+ | Non-Volatile | 512 kb | NVSRAM | 4.75 V | 5.25 V | 0.6 in | 15.24 mm | 32-DIP Module | 85 °C | -40 °C | 32-EDIP | Parallel | NVSRAM (Non-Volatile SRAM) | 100 ns | 512 K | Through Hole | 100 ns | 100 ns |
Analog Devices Inc./Maxim Integrated DS1250ABP-100 | Non-Volatile | 512 kb | NVSRAM | 4.75 V | 5.25 V | 34-PowerCap™ Module | 70 °C | 0 °C | 34-PowerCap Module | Parallel | NVSRAM (Non-Volatile SRAM) | 100 ns | 512 K | Surface Mount | 100 ns | 100 ns | ||
Analog Devices Inc./Maxim Integrated DS1250AB-100 | Non-Volatile | 512 kb | NVSRAM | 4.75 V | 5.25 V | 0.6 in | 15.24 mm | 32-DIP Module | 70 °C | 0 °C | 32-EDIP | Parallel | NVSRAM (Non-Volatile SRAM) | 100 ns | 512 K | Through Hole | 100 ns | 100 ns |
Analog Devices Inc./Maxim Integrated DS1250AB-70 | Non-Volatile | 512 kb | NVSRAM | 4.75 V | 5.25 V | 0.6 in | 15.24 mm | 32-DIP Module | 70 °C | 0 °C | 32-EDIP | Parallel | NVSRAM (Non-Volatile SRAM) | 70 ns | 512 K | Through Hole | ||
Analog Devices Inc./Maxim Integrated DS1250ABP-70IND | Non-Volatile | 512 kb | NVSRAM | 4.75 V | 5.25 V | 34-PowerCap™ Module | 85 °C | -40 °C | 34-PowerCap Module | Parallel | NVSRAM (Non-Volatile SRAM) | 70 ns | 512 K | Surface Mount |