IRF7910 Series

Catalog

MOSFET 2N-CH 12V 10A 8SO

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Configuration	Package / Case	Package / Case [y]	Package / Case [x]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power - Max [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Feature	Drain to Source Voltage (Vdss)
Infineon Technologies IRF7910TRPBF	26 nC	MOSFET (Metal Oxide)	2 N-Channel (Dual)	8-SOIC	3.9 mm	0.154 in	1730 pF	8-SO	2 W	2 V	15 mOhm	Surface Mount	-55 °C	150 °C	10 A	Logic Level Gate	12 V
Infineon Technologies IRF7910PBF	26 nC	MOSFET (Metal Oxide)	2 N-Channel (Dual)	8-SOIC	3.9 mm	0.154 in	1730 pF	8-SO	2 W	2 V	15 mOhm	Surface Mount	-55 °C	150 °C	10 A	Logic Level Gate	12 V