IR MOSFET™ N-CHANNEL ; I2PAK TO-262 PACKAGE; 22 MOHM;
| Part | Mounting Type | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Package / Case | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Supplier Device Package | Power Dissipation (Max) [Max] | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Through Hole | 5 V | 5380 pF | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 150 nC | 200 V | I2PAK TO-262-3 Long Leads TO-262AA | 72 A | 22 mOhm | TO-262 | 375 W | N-Channel |