30 V, single N-channel Trench MOSFET
30 V, single N-channel Trench MOSFET
| Part | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Technology | Rds On (Max) | Package / Case | Power Dissipation (Max) | Current - Continuous Drain (Id) (Ta) | Input Capacitance (Ciss) (Max) | Gate Charge (Max) | Package Name | FET Type | Drain to Source Voltage (Vdss) | Operating Temperature (Min) | Operating Temperature (Max) | Vgs (Max) | Mounting Type | Vgs(th) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 4.5 V | 1.8 V | MOSFET (Metal Oxide) | 16 mOhm | 6-UDFN Exposed Pad | 1.7 W 12.5 W | 8 A | 2195 pF | 36 nC | DFN2020MD-6 | N-Channel | 30 V | -55 °C | 150 °C | 12 V | Surface Mount | 900 mV |