Catalog
NRND = Not Recommended for New Design
Description
AI
This new generation 30V N channel enhancement mode MOSFET DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:
Beta
⌘K
NRND = Not Recommended for New Design
NRND = Not Recommended for New Design
| Part | FET Type | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Package / Case | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Technology | FET Feature | Supplier Device Package | Vgs (Max) | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | N-Channel | 12 A | Surface Mount | -55 °C | 150 °C | 14.7 nC | 30 V | 8-PowerVDFN | 2.5 V | 4310 pF | MOSFET (Metal Oxide) | Schottky Diode (Body) | POWERDI3333-8 | 20 V | 890 mW | 4.5 V 10 V | 10 mOhm |