IDH10G65 Series
Manufacturer: INFINEON
Beta
⌘K
SILICON CARBIDE SCHOTTKY DIODE, THINQ, SINGLE, 650 V, 10 A, 15 NC, TO-220
| Part | Technology | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) | Current - Average Rectified (Io) | Current - Reverse Leakage | Capacitance | Mounting Type | Package / Case | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Package Name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | SiC (Silicon Carbide) Schottky | 175 °C | -55 °C | 0 ns | 650 V | 1.7 V | 10 A | 180 µA | 300 pF | Through Hole | TO-220-2 | 500 mA | No Recovery Time | 500 mA 500 mA | PG-TO220-2-1 |