DMP22D6UFB4 Series

20V P-Channel Enhancement Mode MOSFET

Catalog

20V P-Channel Enhancement Mode MOSFET

Part	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]
Diodes Inc DMP22D6UFB4-7B	MOSFET (Metal Oxide)	460 mW	600 mA	3-XFDFN	8 V	20 V	500 pC	24 pF	Surface Mount	1.9 Ohm	1.5 V 4.5 V	P-Channel	1 V	-55 °C	150 °C

Catalog

20V P-Channel Enhancement Mode MOSFET

Key Features

• Footprint of Just 0.6mm2– 13 Times Smaller than SOT23

• 4mm Profile – Ideal for Low Profile Applications

• Low Gate Threshold Voltage

• Fast Switching Speed

• ESD Protected

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.