MBR1035 Series
Manufacturer: Taiwan Semiconductor Corporation
DIODE GEN PURP 35V 10A TO220AC
| Part | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Speed - Recovery Time | Voltage - Forward (Vf) (Max) | Package Name | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Package / Case | Current - Reverse Leakage | Technology | Mounting Type | Current - Average Rectified (Io) (per Diode) | Diode Pair Count | Diode Configuration | Speed - Fast Recovery (Maximum) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 150 °C | -55 °C | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 700 mV | TO-220AC | 35 V | 10 A | TO-220-2 | 100 µA | Standard | Through Hole | ||||
Taiwan Semiconductor Corporation | 150 °C | -55 °C | 200 mA | 800 mV | TO-220AB | 35 V | TO-220-3 | 100 µA | Schottky | Through Hole | 10 A | 1 pair | Common Cathode | 500 ns |