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12 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
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12 V, N-channel Trench MOSFET
12 V, N-channel Trench MOSFET
| Part | FET Type | Vgs(th) (Max) | Rds On (Max) | Vgs (Max) | Gate Charge (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Mounting Type | Package / Case | Package Name | Package Length | Package Width | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) (Ta) | Power Dissipation (Max) | Technology | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | N-Channel | 900 mV | 18 mOhm | 8 V | 24 nC | -55 °C | 150 °C | 4.5 V | 1.5 V | Surface Mount | 6-XFBGA WLCSP | 6-WLCSP | 1.48 mm | 0.98 mm | 920 pF | 7.3 A | 12.5 W 556 mW | MOSFET (Metal Oxide) | 12 V |