ADG636 Series

1pC Charge Injection, 100pA Leakage, CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch

Manufacturer: Analog Devices Inc./Maxim Integrated

Catalog

1pC Charge Injection, 100pA Leakage, CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch

Part	Package Width	Package Name	Package Length	Switch Time Ton (Max)	Switch Time Toff (Max)	Crosstalk	-3db Bandwidth	Switch Circuit Type	Number of Circuits	On-State Resistance (Max)	Current - Leakage (Max)	Mounting Type	Channel Capacitance (CD(off))	Channel Capacitance (CS(off))	Channel-to-Channel Matching (ΔRon)	Voltage - Supply, Dual (Nominal)	Voltage - Supply, Dual (Minimum)	Voltage - Supply, Dual (Maximum)	Multiplexer Inputs	Demultiplexer Outputs	Voltage - Supply, Single (V+) (Maximum)	Voltage - Supply, Single (V+) (Minimum)	Operating Temperature (Max)	Operating Temperature (Min)	Charge Injection
Analog Devices Inc./Maxim Integrated ADG636YRUZ	4.4 mm	14-TSSOP	0.173 in	135 ns	80 ns	-65 dB	610 MHz	SPDT	2	115 Ohm	100 pA	Surface Mount	8 pF	5 pF	2 Ohm	2.7 V	-2.7 V	5.5 V	2	1	5.5 V	2.7 V	125 °C	-40 °C	-1.2 pC
Analog Devices Inc./Maxim Integrated ADG636YRUZ-REEL	4.4 mm	14-TSSOP	0.173 in	135 ns	80 ns	-65 dB	610 MHz	SPDT	2	115 Ohm	100 pA	Surface Mount	8 pF	5 pF	2 Ohm	2.7 V	-2.7 V	5.5 V	2	1	5.5 V	2.7 V	125 °C	-40 °C	-1.2 pC
Analog Devices Inc./Maxim Integrated ADG636YRU-REEL	4.4 mm	14-TSSOP	0.173 in	135 ns	80 ns	-65 dB	610 MHz	SPDT	2	115 Ohm	100 pA	Surface Mount	8 pF	5 pF	2 Ohm	2.7 V	-2.7 V	5.5 V	2	1	5.5 V	2.7 V	125 °C	-40 °C	-1.2 pC
Analog Devices Inc./Maxim Integrated ADG636YRUZ-REEL7	4.4 mm	14-TSSOP	0.173 in	135 ns	80 ns	-65 dB	610 MHz	SPDT	2	115 Ohm	100 pA	Surface Mount	8 pF	5 pF	2 Ohm	2.7 V	-2.7 V	5.5 V	2	1	5.5 V	2.7 V	125 °C	-40 °C	-1.2 pC

Catalog

1pC Charge Injection, 100pA Leakage, CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch

Description

The ADG636 is a monolithic device, comprising two indepen-dently selectable CMOS single pole, double throw (SPDT) switches. When on, each switch conducts equally well in both directions.The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7 V to +5.5 V.This switch offers ultralow charge injection of ±1.5 pC over the entire signal range and leakage current of 10 pA typical at 25°C. In addition, it offers on resistance of 85 Ω typical, which is matched to within 2 Ω between channels. The ADG636 also has low power dissipation yet is capable of high switching speeds.The ADG636 exhibits break-before-make switching action and is available in a 14-lead TSSOP package.Product HighlightsUltralow charge injection. QINJ: ±1.5 pC typical over the full signal rangeLeakage current <0.25 nA maximum at 85°CDual ±2.7 V to ±5 V or single +2.7 V to +5.5 V supplyAutomotive temperature range: −40°C to +125°CSmall 14-lead TSSOP packageApplicationsAutomatic test equipmentData acquisition systemsBattery-powered instrumentsCommunication systemsSample-and-hold systemsRemote-powered equipmentAudio and video signal routingRelay replacementAvionics