IPD80R Series
Manufacturer: INFINEON
MOSFET N-CH 800V 5.7A TO252-3
| Part | Input Capacitance (Ciss) (Max) | Vgs(th) (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Gate Charge (Max) | Drain to Source Voltage (Vdss) | Technology | Mounting Type | Power Dissipation (Max) | FET Type | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Rds On (Max) | Current - Continuous Drain (Id) (Tc) | Package Name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | 785 pF | 3.9 V | -55 °C | 150 °C | 31 nC | 800 V | MOSFET (Metal Oxide) | Surface Mount | 83 W | N-Channel | 20 V | 10 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 950 mOhm | 5.7 A | PG-TO252-3-11 |
INFINEON | 930 pF | 3.5 V | -55 °C | 150 °C | 30 nC | 800 V | MOSFET (Metal Oxide) | Surface Mount | 84 W | N-Channel | 20 V | 10 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 360 mOhm | 13 A | PG-TO252-3 |
INFINEON | 290 pF | 3.9 V | -55 °C | 150 °C | 12 nC | 800 V | MOSFET (Metal Oxide) | Surface Mount | 42 W | N-Channel | 20 V | 10 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 2.8 Ohm | 1.9 A | PG-TO252-3-11 |
INFINEON | 1200 pF | 3.5 V | -55 °C | 150 °C | 36 nC 36 nC | 800 V | MOSFET (Metal Oxide) | Surface Mount | 101 W | N-Channel | 20 V | 10 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 280 mOhm | 17 A | PG-TO252-3 |
INFINEON | 570 pF | 3.9 V | -55 °C | 150 °C | 23 nC | 800 V | MOSFET (Metal Oxide) | Surface Mount | 63 W | N-Channel | 20 V | 10 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 1.4 Ohm | 3.9 A | PG-TO252-3-11 |
INFINEON | 770 pF | 3.5 V | -55 °C | 150 °C | 24 nC 24 nC | 800 V | MOSFET (Metal Oxide) | Surface Mount | 73 W | N-Channel | 20 V | 10 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 450 mOhm | 11 A | PG-TO252-2 |