SN74BCT2827C Series

10-ch, 4.5-V to 5.5-V buffers with 3-state outputs

Catalog

10-ch, 4.5-V to 5.5-V buffers with 3-state outputs

Part	Package / Case [custom]	Package / Case	Package / Case [custom]	Operating Temperature [Max]	Number of Bits per Element	Mounting Type	Logic Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Number of Elements	Output Type	Supplier Device Package	Current - Output High, Low [custom]	Current - Output High, Low [custom]	Package / Case	Package / Case
Texas Instruments SN74BCT2827CDWR	7.5 mm	24-SOIC	0.295 in	70 °C	10	Surface Mount	Buffer Non-Inverting	4.5 V	5.5 V	1	3-State	24-SOIC	12 mA	1 mA
Texas Instruments SN74BCT2827CDW	7.5 mm	24-SOIC	0.295 in	70 °C	10	Surface Mount	Buffer Non-Inverting	4.5 V	5.5 V	1	3-State	24-SOIC	12 mA	1 mA
Texas Instruments SN74BCT2827CNT		24-DIP		70 °C	10	Through Hole	Buffer Non-Inverting	4.5 V	5.5 V	1	3-State	24-PDIP	12 mA	1 mA	0.3 in	7.62 mm

Catalog

10-ch, 4.5-V to 5.5-V buffers with 3-state outputs

Key Features

• BiCMOS Design Substantially Reduces ICCZOutput Ports Have Equivalent 25-Resistors; No External Resistors Are RequiredSpecifically Designed to Drive MOS DRAMs3-State Outputs Drive Bus Lines or Buffer Memory Address RegistersFlow-Through Architecture Optimizes PCB LayoutPower-Up High-Impedance StateESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (JT, NT)BiCMOS Design Substantially Reduces ICCZOutput Ports Have Equivalent 25-Resistors; No External Resistors Are RequiredSpecifically Designed to Drive MOS DRAMs3-State Outputs Drive Bus Lines or Buffer Memory Address RegistersFlow-Through Architecture Optimizes PCB LayoutPower-Up High-Impedance StateESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (JT, NT)

Description

These 10-bit buffers and bus drivers are specifically designed to drive the capacitive input characteristics of MOS DRAMs. They provide high-performance bus interface for wide data paths or buses carrying parity. The 3-state control gate is a 2-input AND gate with active-low inputs so if either output-enable (or) input is high, all ten outputs are in the high-impedance state. The outputs are also in the high-impedance state during power-up and power-down conditions. The outputs remain in the high-impedance state while the device is powered down. The SN54BCT2827C is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74BCT2827C is characterized for operation from 0°C to 70°C. These 10-bit buffers and bus drivers are specifically designed to drive the capacitive input characteristics of MOS DRAMs. They provide high-performance bus interface for wide data paths or buses carrying parity. The 3-state control gate is a 2-input AND gate with active-low inputs so if either output-enable (or) input is high, all ten outputs are in the high-impedance state. The outputs are also in the high-impedance state during power-up and power-down conditions. The outputs remain in the high-impedance state while the device is powered down. The SN54BCT2827C is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74BCT2827C is characterized for operation from 0°C to 70°C.