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DIODE GEN PURP 200V 6A R-6
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - DC Reverse (Vr) (Max) [Max] | Technology | Package / Case | Voltage - Forward (Vf) (Max) @ If | Capacitance @ Vr, F | Current - Reverse Leakage @ Vr | Speed | Speed | Supplier Device Package | Mounting Type | Current - Average Rectified (Io) | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 150 °C | -55 °C | 200 V | Standard | R-6 Axial | 1 V | 60 pF | 10 µA | Standard Recovery >500ns | 200 mA | R-6 | Through Hole | 6 A | ||
Taiwan Semiconductor Corporation | 150 °C | -55 °C | 200 V | Standard | R-6 Axial | 1 V | 60 pF | 10 µA | Standard Recovery >500ns | 200 mA | R-6 | Through Hole | 6 A | Automotive | AEC-Q101 |