IC FLASH 32MBIT SPI/QUAD 10WLCSP
| Part | Access Time | Memory Organization | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Clock Frequency | Technology | Voltage - Supply [Max] | Voltage - Supply [Min] | Mounting Type | Package / Case | Memory Size | Memory Type | Memory Interface | Memory Format | Write Cycle Time - Word, Page | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited GD25LE32ELIGR | 6 ns | 4M x 8 | 10-WLCSP | 85 °C | -40 °C | 60 µs | 2.4 ms | 133 MHz | FLASH - NOR (SLC) | 2 V | 1.65 V | Surface Mount | 10-XFBGA, WLCSP | 32 Gbit | Non-Volatile | QPI, Quad I/O, SPI | FLASH | |||
GigaDevice Semiconductor (HK) Limited GD25LE32E3IGR | 6 ns | 4M x 8 | 10-WLCSP | 85 °C | -40 °C | 60 µs | 2.4 ms | 133 MHz | FLASH - NOR (SLC) | 2 V | 1.65 V | Surface Mount | 10-XFBGA, WLCSP | 32 Gbit | Non-Volatile | QPI, Quad I/O, SPI | FLASH | |||
GigaDevice Semiconductor (HK) Limited GD25LE32EEEGR | 6 ns | 4M x 8 | 8-USON (3x2) | 125 °C | -40 °C | 100 µs | 4 ms | 133 MHz | FLASH - NOR (SLC) | 2 V | 1.65 V | Surface Mount | 8-XFDFN Exposed Pad | 32 Gbit | Non-Volatile | QPI, Quad I/O, SPI | FLASH | |||
GigaDevice Semiconductor (HK) Limited GD25LE32ENIGR | 6 ns | 4M x 8 | 8-USON (3x4) | 85 °C | -40 °C | 60 µs | 2.4 ms | 133 MHz | FLASH - NOR (SLC) | 2 V | 1.65 V | Surface Mount | 8-UDFN Exposed Pad | 32 Gbit | Non-Volatile | QPI, Quad I/O, SPI | FLASH | |||
GigaDevice Semiconductor (HK) Limited GD25LE32EQIGR | 6 ns | 4M x 8 | 8-USON (4x4) | 85 °C | -40 °C | 60 µs | 2.4 ms | 133 MHz | FLASH - NOR (SLC) | 2 V | 1.65 V | Surface Mount | 8-XDFN Exposed Pad | 32 Gbit | Non-Volatile | QPI, Quad I/O, SPI | FLASH | |||
GigaDevice Semiconductor (HK) Limited GD25LE32DLIGR | 4M x 8 | 85 °C | -40 °C | 120 MHz | FLASH - NOR | 2 V | 1.65 V | Surface Mount | 21-XFBGA, WLSCP | 32 Gbit | Non-Volatile | SPI - Quad I/O | FLASH | 2.4 ms | ||||||
GigaDevice Semiconductor (HK) Limited GD25LE32EEIGR | 6 ns | 4M x 8 | 8-USON (3x2) | 85 °C | -40 °C | 60 µs | 2.4 ms | 133 MHz | FLASH - NOR (SLC) | 2 V | 1.65 V | Surface Mount | 8-XFDFN Exposed Pad | 32 Gbit | Non-Volatile | QPI, Quad I/O, SPI | FLASH | |||
GigaDevice Semiconductor (HK) Limited GD25LE32ESIGR | 6 ns | 4M x 8 | 8-SOP | 85 °C | -40 °C | 60 µs | 2.4 ms | 133 MHz | FLASH - NOR (SLC) | 2 V | 1.65 V | Surface Mount | 8-SOIC | 32 Gbit | Non-Volatile | QPI, Quad I/O, SPI | FLASH | 5.3 mm | 0.209 " |