PSMN7R5 Series

N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology

Catalog

N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology

Part	Rds On (Max)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	FET Type	Package Name	Power Dissipation (Max)	Technology	Gate Charge (Max)	Current - Continuous Drain (Id) (Tj)
Nexperia USA Inc. PSMN7R5-30MLDX	7.6 mOhm 7.6 mOhm	8-LFPAK33 (5-Lead) SOT-1210	-55 °C	175 °C	10 V	4.5 V	57 A	2.2 V	Surface Mount	655 pF	20 V	30 V	N-Channel	LFPAK33	45 W	MOSFET (Metal Oxide)	11.3 nC
Nexperia USA Inc. PSMN7R5-30YLDX	7.5 mOhm	SC-100 SOT-669	-55 °C	175 °C	10 V	4.5 V		2.2 V	Surface Mount	655 pF	20 V	30 V	N-Channel	LFPAK56 Power-SO8	34 W	MOSFET (Metal Oxide)	11.3 nC	51 A
Nexperia USA Inc. PSMN7R5-60YLX	7.5 mOhm	SC-100 SOT-669	-55 °C	175 °C	10 V	5 V	86 A	2.1 V	Surface Mount	4570 pF	20 V	60 V	N-Channel	LFPAK56 Power-SO8	147 W	MOSFET (Metal Oxide)	31 nC

Catalog

N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology

Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.