DCK20C1200HB Series

CC SiC Diode in TO247-3L

Catalog

CC SiC Diode in TO247-3L

Part	Reverse Recovery Time (trr)	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Mounting Type	Voltage - DC Reverse (Vr) (Max)	Package Name	Voltage - Forward (Vf) (Max)	Current - Reverse Leakage	Package / Case	Technology	Diode Pair Count	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current
LITTELFUSE DCK20C1200HB	0 ns	175 °C	-55 °C	Through Hole	1200 V	TO-247 (IXTH)	1.7 V	100 µA	TO-247-3	SiC (Silicon Carbide) Schottky	1 pair	Common Cathode	30 A	500 mA	No Recovery Time	500 mA 500 mA

Catalog

CC SiC Diode in TO247-3L

Description

This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.