Toshiba Semiconductor and Storage | 3 µs | 3 µs | 4-SO 4-SOIC | Surface Mount | AC DC | 300 mV | 3750 VDC | 1 | 50 mA | Transistor | 125 °C | -55 °C | 50 mA | 50 % | 80 V | 4.55 mm | 0.179 in | 2 µs | 3 µs | 150 % | 1.25 V |
Toshiba Semiconductor and Storage | 3 µs | 3 µs | 4-SO 4-SOIC | Surface Mount | AC DC | 300 mV | 3750 VDC | 1 | 50 mA | Transistor | 125 °C | -55 °C | 50 mA | 100 % | 80 V | 4.55 mm | 0.179 in | 2 µs | 3 µs | 300 % | 1.25 V |
Toshiba Semiconductor and Storage | 3 µs | 3 µs | 4-SO 4-SOIC | Surface Mount | AC DC | 300 mV | 3750 VDC | 1 | 50 mA | Transistor | 125 °C | -55 °C | 50 mA | 100 % | 80 V | 4.55 mm | 0.179 in | 2 µs | 3 µs | 600 % | 1.25 V |
Toshiba Semiconductor and Storage | 3 µs | 3 µs | 4-SO 4-SOIC | Surface Mount | AC DC | 300 mV | 3750 VDC | 1 | 50 mA | Transistor | 125 °C | -55 °C | 50 mA | 200 % | 80 V | 4.55 mm | 0.179 in | 2 µs | 3 µs | 600 % | 1.25 V |
Toshiba Semiconductor and Storage | 3 µs | 3 µs | 4-SO 4-SOIC | Surface Mount | AC DC | 300 mV | 3750 VDC | 1 | 50 mA | Transistor | 125 °C | -55 °C | 50 mA | 50 % | 80 V | 4.55 mm | 0.179 in | 2 µs | 3 µs | 600 % | 1.25 V |