IRF5210 Series
Manufacturer: INFINEON
Beta
⌘K
POWER MOSFET, HEXFET, P CHANNEL, 100 V, 38 A, 0.06 OHM, TO-263 (D2PAK), SURFACE MOUNT
| Part | Vgs(th) (Max) | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Vgs (Max) | Current - Continuous Drain (Id) (Tc) | Input Capacitance (Ciss) (Max) | Package / Case | Gate Charge (Max) | Package Name | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) | Rds On (Max) | Technology | Drain to Source Voltage (Vdss) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 4 V | 10 V | 3.1 W 170 W | 20 V | 38 A | 2780 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 230 nC | D2PAK | Surface Mount | -55 °C | 150 °C | 60 mOhm | MOSFET (Metal Oxide) | 100 V | P-Channel |
 INFINEON | 4 V | 10 V | 3.1 W 170 W | 20 V | 38 A | 2780 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 230 nC | D2PAK | Surface Mount | -55 °C | 150 °C | 60 mOhm | MOSFET (Metal Oxide) | 100 V | P-Channel |
 INFINEON | 4 V | 10 V | 3.1 W 170 W | 20 V | 38 A | 2780 pF | I2PAK TO-262-3 Long Leads TO-262AA | 230 nC | TO-262 | Through Hole | -55 °C | 150 °C | 60 mOhm | MOSFET (Metal Oxide) | 100 V | P-Channel |