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60 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Package / Case | Grade | Qualification | Technology | Power Dissipation (Max) | Package Name | Operating Temperature (Min) | Operating Temperature (Max) | Gate Charge (Max) | Drain to Source Voltage (Vdss) | Mounting Type | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) (Ta) | Vgs(th) (Max) | Rds On (Max) | FET Type | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 6-UDFN Exposed Pad | Automotive | AEC-Q101 | MOSFET (Metal Oxide) | 2 W 18.8 W | DFN2020MD-6 | -55 °C | 175 °C | 9.2 nC | 60 V | Surface Mount | 305 pF | 3.4 A | 2.7 V | 77 mOhm | N-Channel | 10 V | 4.5 V | 20 V |