MOSFET N-CH 55V 27A DPAK
| Part | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Technology | FET Type | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 68 W | 700 pF | 20 V | 34 nC | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | N-Channel | 4 V | 45 mOhm | -55 °C | 175 ░C | Surface Mount | 10 V | TO-252AA (DPAK) | 27 A | 55 V | |
Infineon Technologies | 68 W | 700 pF | 20 V | 34 nC | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | N-Channel | 4 V | 45 mOhm | -55 °C | 175 ░C | Surface Mount | 10 V | TO-252AA (DPAK) | 27 A | 55 V | |
Infineon Technologies | 48 W | 740 pF | 20 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | N-Channel | 4 V | 24.5 mOhm | -55 °C | 175 ░C | Surface Mount | 10 V | TO-252AA (DPAK) | 30 A | 55 V | 27 nC |