IRF820 Series

Catalog

MOSFET N-CH 500V 2.5A TO220AB

Part	Package Name	Technology	Input Capacitance (Ciss) (Max)	Rds On (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Vgs (Max)
Vishay Dale IRF820	TO-220AB	MOSFET (Metal Oxide)	360 pF	3 Ohm	4 V	2.5 A	Through Hole	500 V	24 nC 24 nC	-55 °C	150 °C	50 W	10 V	TO-220-3	N-Channel	20 V
Vishay Dale IRF820A	TO-220AB	MOSFET (Metal Oxide)	340 pF	3 Ohm	4.5 V	2.5 A	Through Hole	500 V	17 nC	-55 °C	150 °C	50 W	10 V	TO-220-3	N-Channel	30 V
Vishay Dale IRF820ALPBF	I2PAK	MOSFET (Metal Oxide)	340 pF	3 Ohm	4.5 V	2.5 A	Through Hole	500 V	17 nC	-55 °C	150 °C	50 W	10 V	I2PAK TO-262-3 Long Leads TO-262AA	N-Channel	30 V
Vishay Dale IRF820AL	I2PAK	MOSFET (Metal Oxide)	340 pF	3 Ohm	4.5 V	2.5 A	Through Hole	500 V	17 nC	-55 °C	150 °C	50 W	10 V	I2PAK TO-262-3 Long Leads TO-262AA	N-Channel	30 V
Vishay Dale IRF820PBF-BE3	TO-220AB	MOSFET (Metal Oxide)	360 pF	3 Ohm	4 V	2.5 A	Through Hole	500 V	24 nC 24 nC	-55 °C	150 °C	50 W	10 V	TO-220-3	N-Channel	20 V
Vishay Dale IRF820PBF	TO-220AB	MOSFET (Metal Oxide)	360 pF	3 Ohm	4 V	2.5 A	Through Hole	500 V	24 nC 24 nC	-55 °C	150 °C	50 W	10 V	TO-220-3	N-Channel	20 V
Vishay Dale IRF820LPBF	I2PAK	MOSFET (Metal Oxide)	360 pF	3 Ohm	4 V	2.5 A	Through Hole	500 V	24 nC 24 nC	-55 °C	150 °C	3.1 W 50 W	10 V	I2PAK TO-262-3 Long Leads TO-262AA	N-Channel	20 V
Vishay Dale IRF820S	TO-263 (D2PAK)	MOSFET (Metal Oxide)	360 pF	3 Ohm	4 V	2.5 A	Surface Mount	500 V	24 nC 24 nC	-55 °C	150 °C	3.1 W 50 W	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	20 V