P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | FET Type | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Package / Case | Technology | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 4.5 V 10 V | 20 V | P-Channel | 51 mOhm | -55 °C | 150 °C | TO-252-3 | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | 40 V | 2.14 W | 14 nC | 3 V | Surface Mount | 7.2 A | 674 pF |