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MOSFET N-CH 800V 25A ISO264
| Part | Drain to Source Voltage (Vdss) | Vgs (Max) | Rds On (Max) @ Id, Vgs | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Vgs(th) (Max) @ Id | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 800 V | 20 V | 150 mOhm | Through Hole | 25 A | -55 °C | 150 °C | ISO264™ | 4 V | MOSFET (Metal Oxide) | 166 nC | TO-264-3 TO-264AA | N-Channel | 10 V | 250 W |