30V P-Channel Enhancement Mode MOSFET
30V P-Channel Enhancement Mode MOSFET
| Part | Drain to Source Voltage (Vdss) | Vgs (Max) | Supplier Device Package | Vgs(th) (Max) @ Id | Package / Case | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Power Dissipation (Max) | Technology | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 30 V | 12 V | SOT-23-3 | 1.3 V | SC-59 SOT-23-3 TO-236-3 | P-Channel | 1.8 V 10 V | -55 °C | 150 °C | 15.9 nC | Surface Mount | 700 mW | MOSFET (Metal Oxide) | 3.3 A | 72 mOhm | 708 pF |
Diodes Inc | 30 V | 12 V | SOT-23-3 | 1.3 V | SC-59 SOT-23-3 TO-236-3 | P-Channel | 1.8 V 10 V | -55 °C | 150 °C | 15.9 nC | Surface Mount | 700 mW | MOSFET (Metal Oxide) | 3.3 A | 72 mOhm | 708 pF |