MBR60045 Series
Manufacturer: GeneSiC Semiconductor
DIODE MOD SCHOTT 45V 300A 2TOWER
| Part | Package Name | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Technology | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Diode Pair Count | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Package / Case | Voltage - Forward (Vf) (Max) | Mounting Type | Current - Average Rectified (Io) (per Diode) | Current - Reverse Leakage |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Twin Tower | 150 °C | -55 °C | Schottky | 500 ns | 200 mA | 1 pair | Common Anode | 45 V | Twin Tower | 600 mV | Chassis Mount | 300 A | 5 mA |
GeneSiC Semiconductor | Twin Tower | 150 °C | -55 °C | Schottky | 500 ns | 200 mA | 1 pair | Common Cathode | 45 V | Twin Tower | 750 mV | Chassis Mount | 300 A | 1 mA |
GeneSiC Semiconductor | Twin Tower | 150 °C | -55 °C | Schottky | 500 ns | 200 mA | 1 pair | Common Cathode | 45 V | Twin Tower | 600 mV | Chassis Mount | 300 A | 5 mA |
GeneSiC Semiconductor | Twin Tower | 150 °C | -55 °C | Schottky | 500 ns | 200 mA | 1 pair | Common Anode | 45 V | Twin Tower | 600 mV | Chassis Mount | 300 A | 5 mA |
GeneSiC Semiconductor | Twin Tower | 150 °C | -55 °C | Schottky | 500 ns | 200 mA | 1 pair | Common Cathode | 45 V | Twin Tower | 750 mV | Chassis Mount | 300 A | 1 mA |
GeneSiC Semiconductor | Twin Tower | 150 °C | -55 °C | Schottky | 500 ns | 200 mA | 1 pair | Common Cathode | 45 V | Twin Tower | 600 mV | Chassis Mount | 300 A | 5 mA |
GeneSiC Semiconductor | Twin Tower | 150 °C | -55 °C | Schottky | 500 ns | 200 mA | 1 pair | Common Anode | 45 V | Twin Tower | 750 mV | Chassis Mount | 300 A | 1 mA |
GeneSiC Semiconductor | Twin Tower | 150 °C | -55 °C | Schottky | 500 ns | 200 mA | 1 pair | Common Anode | 45 V | Twin Tower | 750 mV | Chassis Mount | 300 A | 1 mA |