IC GATE DRVR HALF-BRIDGE 8DIP
| Part | Voltage - Supply [Max] | Voltage - Supply [Min] | Input Type | Driven Configuration | Channel Type | Package / Case | Package / Case | Package / Case | Gate Type | Number of Drivers | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Logic Voltage - VIL, VIH | Operating Temperature [Max] | Operating Temperature [Min] | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Mounting Type | High Side Voltage - Max (Bootstrap) [Max] | Supplier Device Package | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 20 V | 10 VDC | Non-Inverting | Half-Bridge | Synchronous | 0.3 in | 8-DIP | 7.62 mm | IGBT MOSFET N-Channel MOSFET | 2 | 290 mA | 600 mA | 0.8 V 2.5 V | 150 °C | -40 °C | 35 ns | 70 ns | Through Hole | 200 V | 8-PDIP | ||
Infineon Technologies | 20 V | 10 VDC | Non-Inverting | Half-Bridge | Synchronous | 8-SOIC | IGBT N-Channel MOSFET | 2 | 290 mA | 600 mA | 0.8 V 2.5 V | 150 °C | -40 °C | 35 ns | 70 ns | Surface Mount | 200 V | 8-SOIC | 3.9 mm | 0.154 in | ||
Infineon Technologies | 20 V | 10 VDC | Non-Inverting | Half-Bridge | Synchronous | 8-SOIC | IGBT N-Channel MOSFET | 2 | 290 mA | 600 mA | 0.8 V 2.5 V | 150 °C | -40 °C | 35 ns | 70 ns | Surface Mount | 200 V | 8-SOIC | 3.9 mm | 0.154 in |