DMJ65H650SCTI Series

NRND = Not Recommended for New Design

Catalog

NRND = Not Recommended for New Design

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	Technology	Power Dissipation (Max)
Diodes Inc DMJ65H650SCTI	ITO-220AB (Type TH)	12.9 nC	N-Channel	10 A	4 V	10 V	Through Hole	600 mOhm	30 V	-55 °C	150 °C	639 pF	650 V	TO-220-3 Full Pack Isolated Tab	MOSFET (Metal Oxide)	31 W

NRND = Not Recommended for New Design

• 100% Unclamped Inductive Switch (UIS) Test in Production

• Low Input Capacitance

• High BVDSS Rating for Power Application

• Low Input/Output Leakage

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.