BC32 Series

Catalog

TRANS PNP 45V 0.5A TO92-3

Part	DC Current Gain (hFE) (Min)	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Frequency - Transition	Mounting Type	Vce Saturation (Max)	Current - Collector Cutoff (Max)	Current - Collector (Ic) (Max)	Package Name	Operating Temperature	Power - Max	Transistor Type
NXP USA Inc. BC327,126	100	45 V	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	80 MHz	Through Hole	700 mV	100 nA	500 mA	TO-92-3	150 °C	625 mW	PNP
NXP USA Inc. BC327,116	100	45 V	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	80 MHz	Through Hole	700 mV	100 nA	500 mA	TO-92-3	150 °C	625 mW	PNP
NXP USA Inc. BC327-25,112	160	45 V	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	80 MHz	Through Hole	700 mV	100 nA	500 mA	TO-92-3	150 °C	625 mW	PNP
NXP USA Inc. BC327,412	100	45 V	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	80 MHz	Through Hole	700 mV	100 nA	500 mA	TO-92-3	150 °C	625 mW	PNP
NXP USA Inc. BC327-25,116	160	45 V	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	80 MHz	Through Hole	700 mV	100 nA	500 mA	TO-92-3	150 °C	625 mW	PNP
NXP USA Inc. BC327-40,112	250	45 V	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	80 MHz	Through Hole	700 mV	100 nA	500 mA	TO-92-3	150 °C	625 mW	PNP
NXP USA Inc. BC327-40,116	250	45 V	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	80 MHz	Through Hole	700 mV	100 nA	500 mA	TO-92-3	150 °C	625 mW	PNP
NXP USA Inc. BC327-16,112	100	45 V	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	80 MHz	Through Hole	700 mV	100 nA	500 mA	TO-92-3	150 °C	625 mW	PNP