AS4 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 1KV 2.4A TO277A
| Part | Mounting Type | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Voltage - DC Reverse (Vr) (Max) | Capacitance | Package / Case | Current - Average Rectified (Io) | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Speed - Recovery Time | Technology | Package Name | Voltage - Forward (Vf) (Max) | Current - Reverse Leakage | Reverse Recovery Time (trr) | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Surface Mount | 175 °C | -55 °C | 1 kV | 60 pF | 3-PowerDFN TO-277 | 2.4 A | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | Avalanche | TO-277A (SMPC) | 962 mV | 10 µA | 1.8 µs | ||
Vishay General Semiconductor - Diodes Division | Surface Mount | 175 °C | -55 °C | 800 V | 60 pF | 3-PowerDFN TO-277 | 2.4 A | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | Avalanche | TO-277A (SMPC) | 1.1 V | 10 µA | 1.8 µs | AEC-Q101 | Automotive |
Vishay General Semiconductor - Diodes Division | Surface Mount | 175 °C | -55 °C | 800 V | 60 pF | 3-PowerDFN TO-277 | 2.4 A | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | Avalanche | TO-277A (SMPC) | 962 mV | 10 µA | 1.8 µs | ||
Vishay General Semiconductor - Diodes Division | Surface Mount | 175 °C | -55 °C | 400 V | 60 pF | 3-PowerDFN TO-277 | 2.4 A | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | Avalanche | TO-277A (SMPC) | 962 mV | 10 µA | 1.8 µs | ||
Vishay General Semiconductor - Diodes Division | Surface Mount | 175 °C | -55 °C | 400 V | 60 pF | 3-PowerDFN TO-277 | 2.4 A | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | Avalanche | TO-277A (SMPC) | 1.1 V | 10 µA | 1.8 µs | AEC-Q101 | Automotive |
Vishay General Semiconductor - Diodes Division | Surface Mount | 175 °C | -55 °C | 400 V | 60 pF | 3-PowerDFN TO-277 | 2.4 A | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | Avalanche | TO-277A (SMPC) | 962 mV | 10 µA | 1.8 µs | ||
Vishay General Semiconductor - Diodes Division | Surface Mount | 175 °C | -55 °C | 400 V | 60 pF | 3-PowerDFN TO-277 | 2.4 A | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | Avalanche | TO-277A (SMPC) | 962 mV | 10 µA | 1.8 µs | ||
Vishay General Semiconductor - Diodes Division | Surface Mount | 175 °C | -55 °C | 800 V | 60 pF | 3-PowerDFN TO-277 | 2.4 A | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | Avalanche | TO-277A (SMPC) | 962 mV | 10 µA | 1.8 µs | ||
Vishay General Semiconductor - Diodes Division | Surface Mount | 175 °C | -55 °C | 1 kV | 60 pF | 3-PowerDFN TO-277 | 2.4 A | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | Avalanche | TO-277A (SMPC) | 962 mV | 10 µA | 1.8 µs | ||
Vishay General Semiconductor - Diodes Division | Surface Mount | 175 °C | -55 °C | 800 V | 60 pF | 3-PowerDFN TO-277 | 2.4 A | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | Avalanche | TO-277A (SMPC) | 962 mV | 10 µA | 1.8 µs |