Catalog
High voltage fast-switching NPN power transistor
Description
AI
The BUL1203E is manufactured using diffused collector in planar technology to enhance switching speeds and tight hFErange while maintaining a wide RBSOA.
Thanks to his enhanced high voltage structure 1 (EHVS1) it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.