JANTXV2N3634UB-Transistor Series

PNP Silicon Amplifier -140V, -1A

Catalog

PNP Silicon Amplifier -140V, -1A

Part	Operating Temperature (Min)	Operating Temperature (Max)	Transistor Type	Current - Collector Cutoff (Max)	Grade	Qualification	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Package Name	DC Current Gain (hFE) (Min)	Package / Case	Vce Saturation (Max)	Power - Max
Microchip Technology JANTXV2N3634UB	-65 °C	200 °C	PNP	10 µA	Military	357 MIL-PRF-19500	1 A	140 V	Surface Mount	UB	50	4-SMD No Lead	600 mV	1 VA
Microchip Technology JANTXV2N3634UB/TR	-65 °C	200 °C	PNP	10 µA	Military	357 MIL-PRF-19500	1 A	140 V	Surface Mount	UB	50	4-SMD No Lead	600 mV	1 VA

Catalog

PNP Silicon Amplifier -140V, -1A

Description

This specification covers the performance requirements for PNP, silicon, radiation hardened, low-power amplifier, and switching 2N3634 through 2N3637 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/357 and two levels of product assurance are provided for unencapsulated die (JANHC and JANKC).