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MOSFET N-CH 600V 20.7A TO220-3
| Part | Supplier Device Package | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Rds On (Max) @ Id, Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | PG-TO220-3-1 | TO-220-3 | 114 nC | MOSFET (Metal Oxide) | 190 mOhm | 20.7 A | Through Hole | 10 V | 600 V | 208 W | 20 V | -55 °C | 150 °C | 2400 pF | 3.9 V | N-Channel |
Infineon Technologies | PG-TO220-3-1 | TO-220-3 | 114 nC | MOSFET (Metal Oxide) | 190 mOhm | 20.7 A | Through Hole | 10 V | 650 V | 208 W | 20 V | -55 °C | 150 °C | 2400 pF | 3.9 V | N-Channel |