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60 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Qualification | Package / Case | Gate Charge (Max) | Current - Continuous Drain (Id) | Operating Temperature | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | FET Type | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Technology | Package Name | Grade | Vgs (Max) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | AEC-Q101 | SC-59 SOT-23-3 TO-236-3 | 0.21 nC | 240 mA | 175 °C | 10 V | 5 V | N-Channel | 320 mW | 60 V | MOSFET (Metal Oxide) | SOT-23-3 (TO-236) TO-236AB | Automotive | 20 V | Surface Mount |