IC NVSRAM 256KBIT PARALLEL 28DIP
| Part | Voltage - Supply [Min] | Voltage - Supply [Max] | Package / Case | Package / Case | Package / Case | Mounting Type | Technology | Write Cycle Time - Word, Page | Access Time | Memory Interface | Memory Size | Memory Format | Memory Type | Supplier Device Package | Memory Organization | Operating Temperature [Max] | Operating Temperature [Min] | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 4.5 V | 5.5 V | 28-DIP | 0.6 in | 15.24 mm | Through Hole | NVSRAM (Non-Volatile SRAM) | 25 ns | 25 ns | Parallel | 32 KB | NVSRAM | Non-Volatile | 28-PDIP | 32K x 8 | 70 °C | 0 °C | ||
Infineon Technologies | 4.5 V | 5.5 V | 28-DIP | 0.6 in | 15.24 mm | Through Hole | NVSRAM (Non-Volatile SRAM) | 35 ns | 35 ns | Parallel | 32 KB | NVSRAM | Non-Volatile | 28-PDIP | 32K x 8 | 70 °C | 0 °C | ||
Infineon Technologies | 4.5 V | 5.5 V | 28-DIP | 0.6 in | 15.24 mm | Through Hole | NVSRAM (Non-Volatile SRAM) | 45 ns | Parallel | 32 KB | NVSRAM | Non-Volatile | 28-PDIP | 32K x 8 | 70 °C | 0 °C | 45 ns | 45 ns | |
Infineon Technologies | 4.5 V | 5.5 V | 28-DIP | 0.6 in | 15.24 mm | Through Hole | NVSRAM (Non-Volatile SRAM) | 35 ns | 35 ns | Parallel | 32 KB | NVSRAM | Non-Volatile | 28-PDIP | 32K x 8 | 85 °C | -40 °C |