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30 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | FET Type | Rds On (Max) | Package Name | Operating Temperature (Min) | Operating Temperature (Max) | Technology | Mounting Type | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Vgs (Max) | Gate Charge (Max) | Vgs(th) (Max) | Drain to Source Voltage (Vdss) | Package / Case | Current - Continuous Drain (Id) (Ta) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | P-Channel | 120 mOhm | TO-236AB | -55 °C | 150 °C | MOSFET (Metal Oxide) | Surface Mount | 10 V | 4.5 V | 20 V | 7.7 nC | 2.5 V | 30 V | SC-59 SOT-23-3 TO-236-3 | 1.5 A | 2.1 W 340 mW | 252 pF |