MOSFET 2N-CH 20V 4.8A 8TSSOP
| Part | Mounting Type | Package / Case | Package / Case [custom] | Package / Case [custom] | Technology | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Configuration | FET Feature | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs [Max] | Power - Max [Max] | Supplier Device Package | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Surface Mount | 8-TSSOP | 0.173 " | 4.4 mm | MOSFET (Metal Oxide) | 1340 pF | -55 °C | 150 °C | 4.8 A | 23 nC | 2 N-Channel (Dual) | Logic Level Gate | 20 V | 35 mOhm | 1.2 W | 8-TSSOP | 1.2 V |
Infineon Technologies | Surface Mount | 8-TSSOP | 0.173 " | 4.4 mm | MOSFET (Metal Oxide) | 1340 pF | -55 °C | 150 °C | 4.8 A | 23 nC | 2 N-Channel (Dual) | Logic Level Gate | 20 V | 35 mOhm | 1.2 W | 8-TSSOP | 1.2 V |