C3M0065100 Series

Catalog

SICFET N-CH 1000V 35A TO263-7

Part	Vgs(th) (Max)	FET Type	Package Name	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Package Leads	Gate Charge (Max)	Vgs (Max) Negative	Vgs (Max) Positive	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Package / Case
Wolfspeed, Inc. C3M0065100J-TR	3.5 V	N-Channel	D2PAK TO-263-7	15 V	78 mOhm	7 Leads	35 nC	-4 V	15 V	35 A	1000 V	SiCFET (Silicon Carbide)	113.5 W	Surface Mount	-55 °C	150 °C	660 pF
Wolfspeed, Inc. C3M0065100K	3.5 V	N-Channel	TO-247-4L	15 V	78 mOhm		35 nC	-8 V	19 V	35 A	1000 V	SiCFET (Silicon Carbide)	113.5 W	Through Hole	-55 °C	150 °C	660 pF	TO-247-4
Wolfspeed, Inc. C3M0065100J	3.5 V	N-Channel	D2PAK D2PAK-7	15 V	78 mOhm	7 Leads	35 nC	-4 V	15 V	35 A	1000 V	SiCFET (Silicon Carbide)	113.5 W	Surface Mount	-55 °C	150 °C	660 pF