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DIODE SIL CARB 650V 5A TO263-2
| Part | Package / Case | Technology | Speed | Reverse Recovery Time (trr) | Current - Average Rectified (Io) | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Supplier Device Package | Mounting Type | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | SiC (Silicon Carbide) Schottky | No Recovery Time | 0 ns | 5 A | 650 V | 830 µA | 1.8 V | 175 ░C | -55 C | PG-TO263-2 | Surface Mount | 160 pF |