MSC060SMA070 Series

700V, 60 mOhm, Discrete mSiC™ MOSFET

Catalog

700V, 60 mOhm, Discrete mSiC™ MOSFET

Part	Package / Case	Package Name	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Technology	Input Capacitance (Ciss) (Max)	Vgs (Max) Negative	Vgs (Max) Positive	Power Dissipation (Max)	Vgs(th) (Max)	Rds On (Max)	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Leads
Microchip Technology MSC060SMA070SCT/R	16-PowerSOP Module	16-PSMT	Surface Mount
Microchip Technology MSC060SMA070D/S
Microchip Technology MSC060SMA070B4	TO-247-4	TO-247-4	Through Hole	20 V	39 A	700 V	-55 °C	175 °C	56 nC	SiCFET (Silicon Carbide)	1175 pF	-10 V	23 V	143 W	2.4 V	75 mOhm	N-Channel
Microchip Technology MSC060SMA070S	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	D3PAK	Surface Mount	20 V	37 A	700 V	-55 °C	175 °C	56 nC	SiCFET (Silicon Carbide)	1175 pF	-10 V	23 V	130 W	2.4 V	75 mOhm	N-Channel
Microchip Technology MSC060SMA070B	TO-247-3	TO-247-3	Through Hole	20 V	39 A	700 V	-55 °C	175 °C	56 nC	SiCFET (Silicon Carbide)	1175 pF	-10 V	23 V	143 W	2.4 V	75 mOhm	N-Channel
Microchip Technology MSC060SMA070SCT/RM	16-PowerSOP Module	16-PSMT	Surface Mount
Microchip Technology MSC060SMA070SDT/R		D2PAK TO-263-7	Surface Mount		51 A	700 V	-55 °C	175 °C	56 nC	SiC (Silicon Carbide Junction Transistor) SiCFET (Silicon Carbide)	1160 pF	-10 V	23 V	240 W	5 V	75 mOhm	N-Channel	20 V	18 V	7 Leads

Catalog

700V, 60 mOhm, Discrete mSiC™ MOSFET

Description

MSC060SMA070 is part of our newest family of mSiCTM MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.