ISL2110 Series

Catalog

100V, 3A/4A PEAK, HIGH FREQUENCY HALF-BRIDGE DRIVERS

Part	High Side Voltage - Max (Bootstrap)	Package Width	Package Name	Package Length	Operating Temperature (Max)	Operating Temperature (Min)	Gate Channel	Gate Type	Number of Drivers	Driven Configuration	Input Type	Mounting Type	Package / Case	Channel Type	Current - Peak Output (Source)	Current - Peak Output (Sink)	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Logic Voltage - VIH	Logic Voltage - VIL	Fall Time (Typ)	Rise Time (Typ)
Renesas Electronics Corporation ISL2110AR4Z-T	114 V	4 mm	12-DFN	4 mm	125 °C	-40 °C	N-Channel	MOSFET	2	Half-Bridge	Non-Inverting	Surface Mount	12-VFDFN Exposed Pad	Independent	3 A	4 A	14 V	8 V	7.4 V	3.7 V	7.5 ns	9 ns
Renesas Electronics Corporation ISL2110ABZ	114 V	3.9 mm	8-SOIC	0.154 in	125 °C	-40 °C	N-Channel	MOSFET	2	Half-Bridge	Non-Inverting	Surface Mount		Independent	3 A	4 A	14 V	8 V	7.4 V	3.7 V	7.5 ns	9 ns
Renesas Electronics Corporation ISL2110AR4Z	114 V	4 mm	12-DFN	4 mm	125 °C	-40 °C	N-Channel	MOSFET	2	Half-Bridge	Non-Inverting	Surface Mount	12-VFDFN Exposed Pad	Independent	3 A	4 A	14 V	8 V	7.4 V	3.7 V	7.5 ns	9 ns
Renesas Electronics Corporation ISL2110ABZ-T	114 V	3.9 mm	8-SOIC	0.154 in	125 °C	-40 °C	N-Channel	MOSFET N-Channel MOSFET	2	Half-Bridge	Non-Inverting	Surface Mount		Independent	3 A	4 A	14 V	8 V	7.4 V	3.7 V	7.5 ns	9 ns