F1T5 Series
Manufacturer: Taiwan Semiconductor Corporation
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DIODE GEN PURP 600V 1A TS-1
| Part | Grade | Capacitance | Package / Case | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Technology | Current - Reverse Leakage | Qualification | Package Name | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Mounting Type | Voltage - Forward (Vf) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Taiwan Semiconductor Corporation | Automotive | 15 pF | Axial T-18 | 500 ns | 200 mA | Standard | 5 µA | AEC-Q101 | TS-1 | 150 °C | -55 °C | 250 ns | 600 V | 1 A | Through Hole | 1.3 V |