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DIODE GEN PURP 600V 1A TS-1
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Reverse Leakage @ Vr | Speed | Technology | Mounting Type | Qualification | Package / Case | Reverse Recovery Time (trr) | Grade | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Supplier Device Package | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 150 °C | -55 °C | 5 µA | 200 mA 500 ns | Standard | Through Hole | AEC-Q101 | T-18 Axial | 250 ns | Automotive | 600 V | 1.3 V | 1 A | TS-1 | 15 pF |