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30 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | FET Type | Technology | Gate Charge (Max) | Current - Continuous Drain (Id) (Tc) | Current - Continuous Drain (Id) (Ta) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Operating Temperature (Min) | Operating Temperature (Max) | Mounting Type | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Package Name | Package / Case | Vgs (Max) | Vgs(th) (Max) | Input Capacitance (Ciss) (Max) | Rds On (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | P-Channel | MOSFET (Metal Oxide) | 116.7 nC | 71.1 A | 13.5 A | 10 V | 4.5 V | -55 °C | 150 °C | Surface Mount | 30 V | 1.8 W 50 W | MLPAK33 | 8-PowerVDFN | 25 V | 2 V | 3800 pF | 6.1 mOhm |