2N2060 Series

NPN Silicon Dual 60V, 0.5A

Catalog

NPN Silicon Dual 60V, 0.5A

Part	Power - Max	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	DC Current Gain (hFE) (Min)	Mounting Type	Current - Collector Cutoff (Max)	NPN Count	Transistor Type	Transistor Configuration	Voltage - Collector Emitter Breakdown (Max)	Qualification	Current - Collector (Ic) (Max)	Package Name	Grade	Vce Saturation (Max)
Microchip Technology JANTX2N2060	0.6 W	TO-78-6 Metal Can	-65 °C	200 °C	50	Through Hole	10 µA	2	NPN	Dual	60 V	270 MIL-PRF-19500	0.5 mA	TO-78-6	Military	300 mV
Microchip Technology JANTXV2N2060L	2.12 W	TO-78-6 Metal Can	-65 °C	200 °C	50	Through Hole	10 µA	2	NPN	Dual	60 V	270 MIL-PRF-19500	0.5 mA	TO-78-6	Military	300 mV
Microchip Technology JAN2N2060	0.6 W	TO-78-6 Metal Can	-65 °C	200 °C	50	Through Hole	10 µA	2	NPN	Dual	60 V	270 MIL-PRF-19500	0.5 mA	TO-78-6	Military	300 mV
Microchip Technology JAN2N2060L	2.12 W	TO-78-6 Metal Can	-65 °C	200 °C	50	Through Hole	10 µA	2	NPN	Dual	60 V	270 MIL-PRF-19500	0.5 mA	TO-78-6	Military	300 mV

Catalog

NPN Silicon Dual 60V, 0.5A

Description

This specification covers the performance requirements for two electrically isolated, matched NPN, silicon 2N2060 Unitized transistors as one dual unit. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/270.