MSCSM120HRM311AG-Module Series

1200V, 25 mOhm, SP1F, T-Type mSiC™ MOSFET Module

Catalog

1200V, 25 mOhm, SP1F, T-Type mSiC™ MOSFET Module

Part	Drain to Source Voltage (Vdss) (Option 2)	Drain to Source Voltage (Vdss) (Option 1)	Package / Case	Technology	Gate Charge (Max)	Power - Max (Tc)	Mounting Type	Rds On (Max)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Operating Temperature (Max)	Operating Temperature (Min)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Tc) (2)	Configuration - Features	Configuration	Channel Count
Microchip Technology MSCSM120HRM311AG	700 V	1200 V	Module	Silicon Carbide (SiC)	232 nC	365 W 395 W	Chassis Mount	19 mOhm 31 mOhm	3020 pF 4500 pF	2.4 V 2.8 V	175 °C	-40 °C	89 A	124 A	Three Level Inverter	N-Channel	4

Catalog

1200V, 25 mOhm, SP1F, T-Type mSiC™ MOSFET Module

Description

• SiC Power MOSFET - Low RDS(on) - High temperature performance • Kelvin source for easy drive • Low stray inductance • High efficiency converter • Outstanding performance at high frequency operation • Stable temperature behavior • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • RoHS Compliant