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40 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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40 V, P-channel Trench MOSFET
40 V, P-channel Trench MOSFET
| Part | Power Dissipation (Max) | Qualification | Technology | Vgs(th) (Max) | Package Name | Operating Temperature (Min) | Operating Temperature (Max) | Mounting Type | Rds On (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Package / Case | Gate Charge (Max) | FET Type | Current - Continuous Drain (Id) (Ta) | Grade | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 6.25 W 480 mW | AEC-Q101 | MOSFET (Metal Oxide) | 2.5 V | TO-236AB | -55 °C | 150 °C | Surface Mount | 240 mOhm | 10 V | 4.5 V | SC-59 SOT-23-3 TO-236-3 | 6 nC | P-Channel | 1.5 A | Automotive | 40 V | 20 V | 450 pF |