IPD25DP06 Series

Catalog

OPTIMOS™ P-CHANNEL POWER MOSFET -60 V ; DPAK TO-252 PACKAGE; 250 MOHM;

Part	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPD25DP06NMATMA1	28 W	-55 °C	175 ░C	P-Channel	MOSFET (Metal Oxide)	60 V	10 V	250 mOhm	4 V	Surface Mount	20 V	PG-TO252-3-313	10.6 nC	6.5 A	420 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3
Infineon Technologies IPD25DP06LMATMA1	28 W	-55 °C	175 ░C	P-Channel	MOSFET (Metal Oxide)	60 V	4.5 V 10 V	250 mOhm	2 V	Surface Mount	20 V	PG-TO252-3-313		6.5 A	420 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	13.8 nC
Infineon Technologies IPD25DP06LMSAUMA1	28 W	-55 °C	175 ░C	P-Channel	MOSFET (Metal Oxide)	60 V	4.5 V 10 V	250 mOhm	2 V	Surface Mount	20 V	PG-TO252-3-313		6.5 A	420 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	13.8 nC