Beta
⌘K
IR MOSFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ L PACKAGE; 2.2 MOHM;
| Part | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs (Max) | Power Dissipation (Max) | Technology | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Package / Case | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 220 nC | 28 A 148 A | 4 V | 10 V | 60 V | 20 V | 3.3 W 94 W | MOSFET (Metal Oxide) | N-Channel | 8075 pF | DIRECTFET L6 | -55 °C | 175 ░C | 2.2 mOhm | DirectFET™ Isometric L6 | Surface Mount |