Catalog
40 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
40 V, N-channel Trench MOSFET
40 V, N-channel Trench MOSFET
| Part | Power Dissipation (Max) | Vgs(th) (Max) | Drain to Source Voltage (Vdss) | FET Type | Current - Continuous Drain (Id) (Ta) | Grade | Gate Charge (Max) | Package / Case | Rds On (Max) | Technology | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Operating Temperature (Min) | Operating Temperature (Max) | Vgs (Max) | Qualification | Mounting Type | Input Capacitance (Ciss) (Max) | Package Name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 5 W 460 mW | 2.5 V | 40 V | N-Channel | 2.1 A | Automotive | 3.6 nC | SC-59 SOT-23-3 TO-236-3 | 120 mOhm | MOSFET (Metal Oxide) | 10 V | 4.5 V | -55 °C | 150 °C | 20 V | AEC-Q101 | Surface Mount | 170 pF | TO-236AB |