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30 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | FET Type | Gate Charge (Max) | Vgs (Max) | Mounting Type | Drain to Source Voltage (Vdss) | Grade | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Vgs(th) (Max) | Input Capacitance (Ciss) (Max) | Power Dissipation (Max) | Current - Continuous Drain (Id) (Tc) | Current - Continuous Drain (Id) (Ta) | Rds On (Max) | Package / Case | Technology | Qualification | Package Name | Operating Temperature (Min) | Operating Temperature (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | N-Channel | 8 nC | 20 V | Surface Mount | 30 V | Automotive | 10 V | 4.5 V | 2.5 V | 266 pF | 2 W 19 W | 17 A | 5.5 A | 38 mOhm | 6-UDFN Exposed Pad | MOSFET (Metal Oxide) | AEC-Q101 | DFN2020MD-6 | -55 °C | 175 °C |